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PD55003S-E
PD55003S-EReference image

Images are for reference only

Mfr. #:
PD55003S-E
Batch:
new
Description:
RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor POWER RF
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current 2.5 A
Vds-Drain-Source Breakdown Voltage 40 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1 GHz
Gain 17 dB
Output Power 3 W
Minimum Operating Temperature - 65 C
Maximum Operating Temperature 150 C
Mounting Style SMD/SMT
Package/Case PowerSO-10RF-Straight-4
Package Tube
Other product information

Advantage price,PD55003S-E in stock can be shipped on the same day

In Stock: 475
Qty.Unit PriceExt. Price
1+ $18.8302 $18.8302
10+ $16.8727 $168.727
25+ $15.8928 $397.32
100+ $13.9835 $1398.35
250+ $13.3215 $3330.375
400+ $10.6690 $4267.6
1200+ $10.5901 $12708.12
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
475
Minimum:
1
MPQ:
1
Multiples:
1
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