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MRF101BN
MRF101BNReference image

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Mfr. #:
MRF101BN
Batch:
new
Description:
Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current 8.8 A
Vds-Drain-Source Breakdown Voltage 133 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1.8 MHz to 250 MHz
Gain 21.1 dB
Output Power 100 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Mounting Style Through Hole
Package/Case TO-220-3
Package Tube
Other product information

Advantage price,MRF101BN in stock can be shipped on the same day

In Stock: 415
Qty.Unit PriceExt. Price
1+ $40.0587 $40.0587
10+ $30.9197 $309.197
25+ $28.1423 $703.5575
50+ $28.1095 $1405.475
100+ $25.0164 $2501.64
500+ $23.4688 $11734.4
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
415
Minimum:
1
MPQ:
1
Multiples:
1
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